Power Devices
Advanced Power Semiconductors for Efficient Energy Conversion
Silan's power devices, including Insulated Gate Bipolar Transistors (IGBTs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are at the forefront of power electronics technology. Designed for high efficiency, robustness, and thermal performance, they are critical components in applications like motor drives, power supplies, solar inverters, and electric vehicles. We offer a comprehensive portfolio of Silan's power semiconductors to meet your most demanding requirements.
Power Device Selection GuideProduct Models
Frequently Asked Questions
When should I use an IGBT versus a MOSFET?
Generally, MOSFETs are preferred for high-frequency, low-voltage applications, while IGBTs excel in high-voltage, high-current, lower-frequency applications. The choice depends on the specific requirements of your switching circuit.
What does "Field-Stop Trench" mean for an IGBT?
Field-Stop Trench technology is an advanced IGBT design that combines a trench gate and a field-stop layer to significantly reduce switching losses and conduction losses, leading to higher efficiency and power density.